CHEMICAL ETCHING OF STRUCTURAL DEFECTS IN EPITAXIAL GAAS1-XPX AND BULK GAAS

被引：6

作者：

ROSIN, H ^{[1
]}

机构：

[1] KOMBINAT VEB HALBLEITERWERK,FRANKFURT,EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：K5 / &

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[7] ROSIN H, TO BE PUBLISHED
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