DIFFUSION OF SI ATOMS AND DIMERS ON SI(100)

被引:15
作者
HUANG, ZH
ALLEN, RE
机构
[1] Center for Theoretical Physics, Department of Physics, Texas A &M University, College Station
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词
D O I
10.1116/1.577333
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Activation energies for diffusion of Si adatoms and dimers on a Si(100) surface are estimated through computer simulations. The potential field is probed by forcing an adatom to move adiabatically, while the surrounding atoms relax. The Stillinger-Weber potential is used. It is found that (1) the diffusion barrier height for an isolated adatom is smaller than that for a dimer; (2) the activation energies are comparable for the two atoms in a dimer to hop together or to separate from each other; (3) the activation energies of an isolated dimer, a dimer sitting next to a dimer chain, and a dimer at the end of a dimer chain are almost identical, despite differences in the binding energies.
引用
收藏
页码:876 / 879
页数:4
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