共 35 条
[4]
NEW CLASSICAL-MODELS FOR SILICON STRUCTURAL ENERGIES
[J].
PHYSICAL REVIEW B,
1987, 36 (12)
:6434-6445
[5]
DISSOCIATIVE VALENCE FORCE-FIELD POTENTIAL FOR SILICON
[J].
PHYSICAL REVIEW B,
1986, 34 (02)
:1304-1307
[6]
ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1179-1183
[7]
MONTE-CARLO SIMULATION OF CONTINUOUS-SPACE CRYSTAL-GROWTH
[J].
PHYSICAL REVIEW B,
1986, 34 (04)
:2112-2115
[8]
DEVELOPMENT OF A MANY-BODY TERSOFF-TYPE POTENTIAL FOR SILICON
[J].
PHYSICAL REVIEW B,
1987, 35 (06)
:2795-2798
[9]
EVALUATION OF THE STILLINGER-WEBER CLASSICAL INTERACTION POTENTIAL FOR TETRAGONAL SEMICONDUCTORS IN NONIDEAL ATOMIC CONFIGURATIONS
[J].
PHYSICAL REVIEW B,
1986, 33 (10)
:7361-7363
[10]
ASYMMETRIC INTERFACE ROUGHNESS IN SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (03)
:712-715