SPATIAL DISTRIBUTIONS OF THIN OXIDE CHARGING IN REACTIVE ION ETCHER AND MERIE ETCHER

被引：27

作者：

SHIN, HC

NOGUCHI, K

QIAN, XY

JHA, N

HILLS, G

HU, CM

机构：

[1] APPL CVD & ETCH TECHNOL,APPL MAT,SANTA CLARA,CA 95054

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 02期

关键词：

D O I：

10.1109/55.215117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.

引用

页码：88 / 92

页数：5

共 15 条

[1]

Dumin D. J., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P718, DOI 10.1109/IEDM.1988.32913

[2] THIN-OXIDE DAMAGE FROM GATE CHARGING DURING PLASMA PROCESSING [J].