EFFECTS OF OXYGEN ASHING ON INDIUM-TIN OXIDE THIN-FILMS

被引：4

作者：

DE, BN

ZHAO, Y

SNYDER, PG

WOOLLAM, JA

COUTTS, TJ

LI, X

机构：

[1] UNIV NEBRASKA, CTR MICROELECTR & OPT MAT RES, DEPT ELECT ENGN, LINCOLN, NE 68588 USA

[2] SOLAR ENERGY RES INST, GOLDEN, CO 80401 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 1989年 / 39卷 / 1-3期

基金：

美国国家航空航天局;

关键词：

Films--Electric Conductivity - Optical Coatings - Oxides--Thin Films - Spacecraft--Coatings;

D O I：

10.1016/S0257-8972(89)80026-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium-tin oxide (ITO) films were prepared by d.c. sputtering of ITO in an oxygen atmosphere, and measurements of resistivity, thickness, and optical constants were made. The resistivity was found to increase at first and then decrease substantially with ashing in an oxygen plasma. The basic optical gap is relatively unaffected by ashing, but impurity band absorption increased substantially.

引用

页码：647 / 653

页数：7

共 9 条

[1] TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].