COMPARISON OF DRY DEVELOPMENT TECHNIQUES USING O-2 AND SO2/O-2 LOW-PRESSURE PLASMAS

被引：18

作者：

PONS, M ^{[1
]}

JOUBERT, O ^{[1
]}

MARTINET, C ^{[1
]}

PELLETIER, J ^{[1
]}

PANABIERE, JP ^{[1
]}

WEILL, A ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,CNS,CNET,PHYS & CHIM PROCEDES PLASMA LAB,CNRS,ERS 0005,F-38243 MEYLAN,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 02期

关键词：

ADVANCED LITHOGRAPHY; DRY DEVELOPMENT; TRILEVEL RESIST SYSTEM; SO2/O-2 GAS MIXTURE;

D O I：

10.1143/JJAP.33.991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A parametric study of the pattern transfer step in a trilevel resist system using oxygen-based plasmas has been performed using a distributed electron cyclotron resonance reactor with independent rf biasing. In pure oxygen plasmas, critical dimension loss is always present. The mechanisms most likely to be responsible for these defects during the pattern transfer process are presented and discussed. A novel plasma etching process based on sidewall passivation by sulfur is proposed using SO2/O2 mixtures. Perfect anisotropy with negligiable critical dimension loss is obtained at room temperature.

引用

页码：991 / 996

页数：6

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