CW LASER ANNEALING OF POLYCRYSTALLINE SILICON ON SIO2 AND EFFECTS OF SUCCESSIVE FURNACE ANNEALING

被引：6

作者：

KUGIMIYA, K

FUSE, G

INOUE, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.L19

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L19 / L21

页数：3

共 7 条

[1] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[2] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[3] CRYSTAL-STRUCTURE AND THERMAL-OXIDATION OF LASER-RECRYSTALIZED POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

LEE, KF ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :550-553

[4] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J].

LAM, HW ;

TASCH, AF ;

HOLLOWAY, TC .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :206-208

[5] RING OSCILLATORS FABRICATED IN LASER-ANNEALED SILICON-ON-INSULATOR [J].

LAM, HW ;

TASCH, AF ;

HOLLOWAY, TC ;

LEE, KF ;

GIBBONS, JF .

ELECTRON DEVICE LETTERS, 1980, 1 (06) :99-100

[6] ELECTRICAL-PROPERTIES OF CW LASER-ANNEALED ION-IMPLANTED POLYCRYSTALLINE SILICON [J].

ROULET, ME ;

DUTOIT, M ;

LUTHY, W ;

AFFOLTER, K .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :737-739

[7] RESISTIVITY CHANGES IN LASER-ANNEALED POLYCRYSTALLINE SILICON DURING THERMAL ANNEALING [J].

SHIBATA, T ;

IIZUKA, H ;

KOHYAMA, S ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :21-23

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