FABRICATION OF DIAMOND FILMS UNDER HIGH-DENSITY HELIUM PLASMA FORMED BY ELECTRON-CYCLOTRON RESONANCE

被引：7

作者：

YUASA, M

KAWARADA, H

WEI, J

MA, JS

SUZUKI, J

OKADA, S

HIRAKI, A

机构：

[1] WASEDA UNIV, SCH SCI & ENGN, DEPT ELECTR COMMUN, TOKYO 169, JAPAN

[2] SHIMADZU CO, DIV IND MACH, KYOTO 615, JAPAN

[3] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN

来源：

SURFACE & COATINGS TECHNOLOGY | 1991年 / 49卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(91)90086-C

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Helium gas has been employed instead of hydrogen as the carrier gas to fabricate diamond films using a magneto-active plasma chemical vapour deposition (CVD) system at low pressures. Helium plasma has a much higher plasma density than hydrogen plasma and it has been shown that this promotes fabrication of good quality diamond films at low pressures. Using a gas mixture of methyl alcohol and helium, microcrystalline diamond films with a grain size smaller than 500 angstrom have been fabricated. These microsized diamond films have been investigated by employing X-ray photoelectron spectroscopy, and features equivalent to those of natural diamond have been obtained.

引用

页码：374 / 380

页数：7

共 20 条

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BUCK M, 1990, MATER RES SOC SYMP P, V162, P97

[2] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J].