HOMOEPITAXIAL GROWTH AND CHARACTERIZATION OF ZNSE ON DIFFERENT ZNSE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

The ZnSe crystal quality of the homoepitaxial layers is discussed. The homoepitaxial layers were grown by MOVPE on the three kinds of ZnSe substrate. High quality ZnSe epitaxy was obtained at 500-degrees-C and VI/II = 2. The surface morphology was very smooth. Each epilayer showed strong free exciton emission, the FWHM of which was about 1.2 meV. Y emission was not observed. The homoepilayer's quality was strongly affected by the presence of defects in the substrate such as strain variation, grain boundaries, etc. Furthermore, epilayer quality was also affected by mechanical damage of the substrate surface. These defects have been observed by X-ray topography using the Berg-Barrett method.