PREPARATION AND PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS BY SOL-GEL PROCESS

被引:39
作者
HAYASHI, T
OHJI, N
HIROHARA, K
FUKUNAGA, T
MAIWA, H
机构
[1] Department of Materials Science and Ceramic Technology, Shonan Institute of Technology, Tsujido, Fujisawa
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期
关键词
FERROELECTRIC; BATIO3; SOL-GEL METHOD; THIN FILM; C-AXIS ORIENTATION;
D O I
10.1143/JJAP.32.4092
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferroelectric BaTiO3 thin films have been successfully prepared by sol-gel process using barium and titanium isopropoxides as precursor solutions for dip-coating. Homogeneous BaTiO3 thin films have been obtained on various substrates by preheating gel films at 120-degrees-C in a flow of oxygen/water vapor mixed gas, and successive heating at 650-degrees-C in oxygen atmosphere. The introduction of water vapor during preheating is very effective for the crystallization of BaTiO3 at relatively low temperatures. These films exhibit good crystallinity and smooth surfaces with grains as small as about 50 nm. BaTiO3 thin films prepared on Pt/SiO2/Si substrates with a thickness of about 0.5 mum show dielectric constants of 800 approximately 1000 and loss tangents of 0.07-0.09 at 1 kHz. Ferroelectric hysteresis loops were observed for these thin films which possessed the remanent polarization of 8 muC/cm2 and the coercive field of 25 kV/cm.
引用
收藏
页码:4092 / 4094
页数:3
相关论文
共 10 条
  • [1] GROWTH OF BATIO3-SRTIO3 THIN-FILMS BY RF MAGNETRON SPUTTERING
    FUJIMOTO, K
    KOBAYASHI, Y
    KUBOTA, K
    [J]. THIN SOLID FILMS, 1989, 169 (02) : 249 - 256
  • [2] PREPARATION OF FERROELECTRIC BATIO3 THIN-FILMS BY ACTIVATED REACTIVE EVAPORATION
    IIJIMA, K
    TERASHIMA, T
    YAMAMOTO, K
    HIRATA, K
    BANDO, Y
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (06) : 527 - 529
  • [3] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF BATIO3 THIN-FILMS
    KWAK, BS
    ZHANG, K
    BOYD, EP
    ERBIL, A
    WILKENS, BJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 767 - 772
  • [4] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF BATIO3 FILMS ON MGO(100)
    NAKAZAWA, H
    YAMANE, H
    HIRAI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B): : 2200 - 2203
  • [5] PULSED LASER DEPOSITION OF BARIUM-TITANATE FILMS ON SILICON
    NAWATHEY, R
    VISPUTE, RD
    CHAUDHARI, SM
    KANETKAR, SM
    OGALE, SB
    [J]. SOLID STATE COMMUNICATIONS, 1989, 71 (01) : 9 - 12
  • [6] OBSERVATION OF THE EARLY STAGES OF HETEROEPITACTIC GROWTH OF BATIO3 THIN-FILMS
    NORTON, MG
    CARTER, CB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1990, 5 (12) : 2762 - 2765
  • [7] THE INFLUENCE OF STRUCTURE ON THE PIEZOELECTRIC PROPERTIES OF BATIO3 AND (BASR)TIO3 THIN-FILMS WITH A DIFFUSE PHASE-TRANSITION
    SUROWIAK, Z
    MARGOLIN, AM
    ZAKHARCHENKO, IN
    BIRYUKOV, SV
    [J]. THIN SOLID FILMS, 1989, 176 (02) : 227 - 246
  • [8] WILLS LA, 1992, MATER RES SOC S P, V243, P27
  • [9] XU Z, 1992, MATER RES SOC SYMP P, V271, P339, DOI 10.1557/PROC-271-339
  • [10] YANOVSKAYA MI, 1981, INORG MATER+, V17, P221