PREFERENTIAL PHOTOELECTROCHEMICAL ETCHING IN N-INP

被引：4

作者：

MOUTONNET, D

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

MATERIALS LETTERS | 1988年 / 6卷 / 5-6期

关键词：

CRYSTALLOGRAPHY - CRYSTALS - Structure - OPTOELECTRONIC DEVICES - Fabrication;

D O I：

10.1016/0167-577X(88)90098-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A V-shaped groove was obtained on n-InP with a maskless photoelectrochemical method by scanning a laser spot. The groove profile changes with the number of scans, beginning with a flat bottom and ending with a V profile. All these etched shapes depend on the reactivity of the various crystallographic planes and on exposure time.

引用

页码：183 / 185

页数：3

共 7 条

[1]

ADACHI S, 1981, J ELECTROCHEM SOC, V128, P1343

[2] ORIENTATIONAL DEPENDENCE OF PHOTOELECTROCHEMICAL ETCHING IN N-GAAS [J].