9.5HGZ BANDWIDTH HBT GAIN CONTROLLABLE AMPLIFIER IC WITH AN AMPLITUDE DETECTION CIRCUIT

被引：1

作者：

YAMAKAWA, H

IBE, H

AKAGI, J

KURIYAMA, Y

MORIZUKA, K

OBARA, M

机构：

[1] Toshiba Corporation, Kawasaki, 1, Komukai-Toshiba-cho

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 09期

关键词：

Amplifiers; Gallium arsenide; Integrated circuits;

D O I：

10.1049/el:19900396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A wideband and gain controllable amplifier IC which can detect its output signal amplitude has been fabricated using self-aligned AlGaAs/GaAs HBT technology. A 9.5 GHz bandwidth, 10dB maximum gain, over 20 dB controllable gain width and successful amplitude detection were obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：602 / 604

页数：3

共 8 条

[1]

AKAGI J, 1989, IN PRESS GAAS RELATE

[2]

FUJITA S, 1988, OFC 88 NEW ORLEANS

[3]

GNAUCK AH, 1989, ECOC 89 GOTHENBURG

[4] 9GHZ BANDWIDTH, 8-20 DB CONTROLLABLE-GAIN MONOLITHIC AMPLIFIER USING ALGAAS GAAS HBT TECHNOLOGY [J].