9GHZ BANDWIDTH, 8-20 DB CONTROLLABLE-GAIN MONOLITHIC AMPLIFIER USING ALGAAS GAAS HBT TECHNOLOGY

被引：26

作者：

ISHIHARA, N

NAKAJIMA, O

ICHINO, H

YAMAUCHI, Y

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 19期

关键词：

D O I：

10.1049/el:19890881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1317 / 1318

页数：2

共 9 条

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[2]

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[5] WIDEBAND DIRECT-COUPLED DIFFERENTIAL-AMPLIFIERS UTILIZING ALGAAS GAAS HBTS [J].

NAKAJIMA, H ;

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ISHIBASHI, T .

ELECTRONICS LETTERS, 1988, 24 (18) :1178-1179

[6]

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[7]

REIN HM, 1989, IEEE INT SOL STAT CI, P144

[8]

SPARGO T, 1989 S VLSI CIRC, P85

[9] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J].

YAMAUCHI, Y ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :655-657

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