WIDEBAND DIRECT-COUPLED DIFFERENTIAL-AMPLIFIERS UTILIZING ALGAAS GAAS HBTS

被引:2
作者
NAKAJIMA, H
YAMAUCHI, Y
ISHIBASHI, T
机构
[1] NTT LSI Lab, Kanagawa, Jpn, NTT LSI Lab, Kanagawa, Jpn
关键词
D O I
10.1049/el:19880800
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1178 / 1179
页数:2
相关论文
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[2]  
Asbeck P. M., 1987, IEEE 1987 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.87CH2478-6), P1
[3]   SELF-ALIGNED ALGAAS/GAAS HBT WITH LOW EMITTER RESISTANCE UTILIZING INGAAS CAP LAYER [J].
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