CADMIUM SELENIDE THIN-FILM TRANSISTORS

[11] HARPER CA, 1970, HDB MATERIALS PROCES, P14

[12] INOGUCHI T, 1974, SID INT S, P84

[13] ELECTRON TRAPS IN CADMIUM SELENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (04) : 451 - +

[14] KNOWLES T, 1969, J ELECTROCHEM SOC, V116, pC294

[15] KNOWLES TJ, 1972, Patent No. 3669860

[16] DRIFT PHENOMENA IN CDSE THIN FILM FETS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (10) : 997 - &

[17] MITO S, 1977, SID INT S DIG TECH P, P86

[18] TEMPERATURE DEPENDENCE OF FIELD-EFFECT CONDUCTANCE IN THIN POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3177 - +

[19] INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1047 - 1055

[20] Pauw LJvd A, 1958, PHILIPS RES REP, V13, P1

[11] HARPER CA, 1970, HDB MATERIALS PROCES, P14

[12] INOGUCHI T, 1974, SID INT S, P84

[13] ELECTRON TRAPS IN CADMIUM SELENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (04) : 451 - +

[14] KNOWLES T, 1969, J ELECTROCHEM SOC, V116, pC294

[15] KNOWLES TJ, 1972, Patent No. 3669860

[16] DRIFT PHENOMENA IN CDSE THIN FILM FETS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (10) : 997 - &

[17] MITO S, 1977, SID INT S DIG TECH P, P86

[18] TEMPERATURE DEPENDENCE OF FIELD-EFFECT CONDUCTANCE IN THIN POLYCRYSTALLINE CDS FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) : 3177 - +

[19] INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1047 - 1055

[20] Pauw LJvd A, 1958, PHILIPS RES REP, V13, P1