CHARGE STATE OF HYDROGEN IN CRYSTALLINE SILICON

被引：16

作者：

DEAK, P

SNYDER, LC

CORBETT, JW

机构：

[1] UNIV ALBANY,DEPT CHEM,ALBANY,NY 12222

[2] UNIV ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.43.4545

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An estimate is given for the relative stabilities of neutral and positive bond-center hydrogen interstitials and of negatively charged hydrogen at the antibonding site as a function of Fermi-level position. We predict the hydrogen-related donor level to be below the intrinsic Fermi level, and the existence of a Fermi-energy region around midgap where the neutral charge state is stable.

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页码：4545 / 4547

页数：3

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