INVERTED-VERTICAL OMVPE REACTOR - DESIGN AND CHARACTERIZATION

被引：7

作者：

PARSONS, JD

机构：

[1] Department of Applied Physics and Electrical Engineering, Oregon Graduate Institute of Science and Technology, Beaverton

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90648-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An inverted-vertical (IV) OMVPE reactor design is presented. Optimum flow rates are discussed as a function of reactor dimensions and operating pressure. The performance of the IV reactor design is characterized by the purity, thickness uniformity, composition uniformity and electrical uniformity of GaAs and (AlGa)As epilayers and device structures grown on 2 inch diameter GaAs substrates. Device results were obtained from low and high frequency testing of GaAs MESFETs fabricated in MESFET structures grown in the IV reactor.

引用

页码：387 / 396

页数：10