ION-CHANNELING AND OPTICAL-ABSORPTION STUDIES OF IMPLANTATION DISORDER IN GERMANIUM

被引：4

作者：

PICRAUX, ST ^{[1
]}

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3784 / 3788

页数：5

共 19 条

[1]

BOTTIGER J, PRIVATE COMMUNICATIO

[2]

BRICE DK, 1973, ION IMPLANTATION SEM, P171

[3]

DAVIES JA, 1967, CAN J PHYS, V45, P4073

[4] OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS [J].

DONOVAN, TM ;

SPICER, WE ;

BENNETT, JM ;

ASHLEY, EJ .

PHYSICAL REVIEW B, 1970, 2 (02) :397-&

[5]

DONOVAN TM, 1974, P INT C TETRAHEDRALL

[6] INTERPRETATION OF CHANNELING EFFECT MEASUREMENTS OF DISORDER IN ION-IMPLANTED SILICON [J].

EISEN, FH ;

BOTTIGER, J .

APPLIED PHYSICS LETTERS, 1974, 24 (01) :3-5

[7] ENERGY DEPENDENCE OF LATTICE DISORDER IN ION-IMPLANTED SILICON [J].

MARSDEN, DA ;

BELLAVANCE, GR ;

DAVIES, JA ;

MARTINI, M ;

SIGMUND, P .

PHYSICA STATUS SOLIDI, 1969, 35 (01) :269-+

[8] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

MAYER, JW ;

ERIKSSON, L ;

PICRAUX, ST ;

DAVIES, JA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&

[9] CONVERSION OF CRYSTALLINE GERMANIUM TO AMORPHOUS GERMANIUM BY ION BOMBARDMENT [J].

PARSONS, JR .

PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1159-&

[10]

Picraux S. T., 1971, Radiation Effects, V7, DOI 10.1080/00337577108232569

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