INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC

被引：76

作者：

KIMOTO, T

ITOH, A

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Kyoto University, Sakyo

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In situ doping characteristics of N, Al, and B in step-controlled epitaxy of SIC have been investigated. Clear C/Si ratio dependence was observed in the growth on (0001)Si faces. Doping efficiency of N decreased and those of Al and B increased under the C-rich condition, which agrees with a model proposed as ''site-competition epitaxy.'' However, doping efficiencies were almost independent of the C/Si ratio on (000 (1) over bar)C faces. Based on the results, the incorporation mechanism is discussed. (C) 1995 American Institute of Physics.

引用

页码：2385 / 2387

页数：3

共 15 条

[11] SITE-COMPETITION EPITAXY FOR SUPERIOR SILICON-CARBIDE ELECTRONICS [J].