PERIODIC SURFACE-STRUCTURES IN THE EXCIMER LASER ABLATIVE ETCHING OF POLYMERS

被引:91
作者
DYER, PE
FARLEY, RJ
机构
[1] Department of Applied Physics, University of Hull
关键词
D O I
10.1063/1.103414
中图分类号
O59 [应用物理学];
学科分类号
摘要
Periodic surface structures have been observed on organic polymers when photoablated using low coherence excimer lasers. Both unpolarized and linearly polarized radiation at 248 and 308 nm produce well ordered, micron-scale structures over dimensions greatly exceeding the coherence area of the laser at the surface. Surface scattered wave effects appear to explain these structures.
引用
收藏
页码:765 / 767
页数:3
相关论文
共 13 条
[1]   DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J].
ANDREW, JE ;
DYER, PE ;
FORSTER, D ;
KEY, PH .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :717-719
[2]   MORPHOLOGICAL-CHANGES OF THE SURFACE-STRUCTURE OF POLYMERS DUE TO EXCIMER LASER-RADIATION - A SYNERGETIC EFFECT [J].
BAHNERS, T ;
SCHOLLMEYER, E .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1884-1886
[3]   ANOMALOUS LASER-INDUCED PERIODIC SURFACE-STRUCTURES [J].
CLARK, SE ;
KERR, NC ;
EMMONY, DC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1989, 22 (04) :527-534
[4]   DIRECT-ETCHING STUDIES OF POLYMER-FILMS USING A 157-NM F2 LASER [J].
DYER, PE ;
SIDHU, J .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1986, 3 (05) :792-795
[5]   NANOSECOND PHOTOACOUSTIC STUDIES ON ULTRAVIOLET-LASER ABLATION OF ORGANIC POLYMERS [J].
DYER, PE ;
SRINIVASAN, R .
APPLIED PHYSICS LETTERS, 1986, 48 (06) :445-447
[6]  
Emel'yanov V. I., 1987, Soviet Journal of Quantum Electronics, V17, P26, DOI 10.1070/QE1987v017n01ABEH006362
[7]   LASER MIRROR DAMAGE IN GERMANIUM AT 10.6 MU [J].
EMMONY, DC ;
HOWSON, RP ;
WILLIS, LJ .
APPLIED PHYSICS LETTERS, 1973, 23 (11) :598-600
[8]  
Fowles G. R., 1975, INTRO MODERN OPTICS
[9]   GROWTH OF SPONTANEOUS PERIODIC SURFACE-STRUCTURES ON SOLIDS DURING LASER ILLUMINATION [J].
GUOSHENG, Z ;
FAUCHET, PM ;
SIEGMAN, AE .
PHYSICAL REVIEW B, 1982, 26 (10) :5366-5381
[10]   PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].
LEAMY, HJ ;
ROZGONYI, GA ;
SHENG, TT ;
CELLER, GK .
APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537