INTERFACIAL REACTIONS ON ANODIZED GAAS

被引：22

作者：

SCHWARTZ, GP

GRIFFITHS, JE

SCHWARTZ, B

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1383 / 1387

页数：5

共 18 条

[1]

ASPNES D, COMMUNICATION

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[3] DETERMINATION OF REFRACTIVE INDEX AND ABSORPTION COEFFICIENT OF ABSORBING ANISOTROPIC MINERALS [J].

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[4] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES [J].

CHANG, RPH ;

SHENG, TT ;

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COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :341-342

[5] OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].

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[6] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING [J].

FARROW, RL ;

CHANG, RK ;

MROCZKOWSKI, S ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :768-770

[7] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].

HASEGAWA, H ;

HARTNAGEL, HL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723

[8] 2ND-ORDER RAMAN-SCATTERING IN GROUP-VB SEMIMETALS - BI, SB, AND AS [J].

LANNIN, JS ;

CALLEJA, JM ;

CARDONA, M .

PHYSICAL REVIEW B, 1975, 12 (02) :585-593

[9] RAMAN-SCATTERING PROPERTIES OF AMORPHOUS AS AND SB [J].

LANNIN, JS .

PHYSICAL REVIEW B, 1977, 15 (08) :3863-3871

[10] OBSERVATION OF A COUPLED PHONON-DAMPED-PLASMON MODE IN NORMAL-GAAS BY RAMAN-SCATTERING [J].

MURASE, K ;

KATAYAMA, S ;

ANDO, Y ;

KAWAMURA, H .

PHYSICAL REVIEW LETTERS, 1974, 33 (25) :1481-1484

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