ATOMIC RELAXATION AND ELECTRONIC STATES IN ULTRATHIN GE ZNSE SUPERLATTICES

被引：3

作者：

FERRAZ, AC ^{[1
]}

SRIVASTAVA, GP ^{[1
]}

机构：

[1] UNIV EXETER, DEPT PHYS, SEMICOND PHYS GRP, EXETER EX4 4QL, ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 01期

关键词：

D O I：

10.1088/0268-1242/8/1/011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical investigations of atomic relaxation and electronic states in ultrathin (Ge2)n(ZnSe)n superlattices, for n = 1, 2,3, in [001] and [110] growth directions, have been made using the pseudopotential method and a local density scheme. The bond lengths at relaxed interfaces are in agreement with the concept of Pauling's covalent radii. The non-polar interface is found to be more stable than the polar interface. The formation enthalpies and band structures of the polar and non-polar superlattices are discussed in terms of different spatial arrangements of nonocted 'wrong bonds' at the interfaces.

引用

页码：67 / 72

页数：6

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