THE EFFECTS OF ADDED GASES IN THE SPUTTER DEPOSITION OF YBa2Cu3O7 THIN FILMS

被引：3

作者：

Cukauskas, E. J. ^{[1
]}

Sherrill, G. K. ^{[1
]}

Allen, L. H. ^{[1
]}

Holm, R. T. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

YBa2Cu3O7 thin films have been deposited on MgO substrates by off-axis magnetron sputtering in argon, oxygen, and an additional gas. Additions of nitrogen, hydrogen, methane, air, and water vapor in amounts of up to 25% were used in this investigation. Each gas stabilized the target voltage and growth rate for the duration of the deposition. Growth rates improved by over 50% with as little as 3% hydrogen. When used with a target which had degraded after more than 150 hours use, the added gas improved T-C and J(C) beyond levels attained from the new target. T-c increased from 82 K without hydrogen to 89 K with hydrogen and J(C)(12K) from 3x10(4) to >7x10(6) A/cm(2). Nitrogen yielded less dramatic effects. We attribute these improvements to the catalytic effect of these gases in maintaining elevated levels of atomic oxygen during film growth.

引用

页码：1520 / 1523

页数：4

共 9 条

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