ENHANCED CARRIER DIFFUSION LENGTHS AND PHOTON TRANSPORT IN ALXGA1-XAS/GAAS STRUCTURES

被引：9

作者：

BRADSHAW, JL ^{[1
]}

CHOYKE, WJ ^{[1
]}

DEVATY, RP ^{[1
]}

MESSHAM, RL ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several novel features are observed in the low-temperature photoluminescence spectra of AlxGa1-xAs layers grown on GaAs by metalorganic chemical vapor deposition. GaAs substrate luminescence spectra are observed through AlxGa1-xAs layers as thick as 22 μm. Both carrier diffusion to the substrate and AlxGa 1-xAs luminescence are identified as the excitation mechanisms of the GaAs luminescence, and a minority-carrier diffusion length of 10 μm is estimated. The presence of photon recycling in the AlxGa 1-xAs layers is demonstrated by comparison of photoluminescence (PL) spectra for layers with and without GaAs substrates, as well as PL examination of two AlxGa1-xAs heterostructures.

引用

页码：1483 / 1491

页数：9

共 41 条

[1] ABDULLAEV A, 1977, SOV PHYS SEMICOND+, V11, P278
[2] ABDULLAEV A, 1977, SOV PHYS SEMICOND+, V11, P158
[3] ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V9, P305
[4] ALFEROV ZI, 1976, SOV PHYS SEMICOND+, V9, P837
[5] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS
AMBRIDGE, T
STEVENSON, JL
REDSTALL, RM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 222 - 228
[6] ANDREEV VM, 1975, SOV PHYS SEMICOND+, V8, P1540
[7] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
ASBECK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 820 - 822
[8] OPTICAL-PROPERTIES OF ALXGA1-XAS
ASPNES, DE
KELSO, SM
LOGAN, RA
BHAT, R
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 754 - 767
[9] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP
BACHRACH, RZ
LORIMOR, OG
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 700 - 713
[10] BEEB HB, 1972, SEMICONDUCTORS SEMIM, V8, pCH4

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