OPTICALLY PUMPED ROOM-TEMPERATURE INXGA1-XAS LASERS

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] BURDUKOV YM, 1971, SOV PHYS SEMICOND+, V4, P1633

[3] Burdukov Yu. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1906

[4] CODERRE WM, 1969, CAN J PHYS, V48, P463

[5] MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 151 - &

[6] MEHAL E, PRIVATE COMMUNICATIO

[7] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1154 - &

[8] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &

[1] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[2] BURDUKOV YM, 1971, SOV PHYS SEMICOND+, V4, P1633

[3] Burdukov Yu. M., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1906

[4] CODERRE WM, 1969, CAN J PHYS, V48, P463

[5] MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER [J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 151 - &

[6] MEHAL E, PRIVATE COMMUNICATIO

[7] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (08) : 1154 - &

[8] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &