SHUBNIKOV-DEHAAS AND HALL OSCILLATIONS IN INAS-GA1-XINXSB SUPERLATTICES

被引：12

作者：

HOFFMAN, CA ^{[1
]}

MEYER, JR ^{[1
]}

BARTOLI, FJ ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.48.1959

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a quantum transport investigation of n-type InAs-Ga1-xInxSb superlattices. Our data display Shubnikov-de Haas oscillations in the diagonal conductivity accompanied by plateaulike inflections in the Hall conductivity. Correlation of the oscillation periods with carrier densities obtained from mixed-conduction analyses of the nonoscillating conductivity components implies that the electron effective mass is nearly isotropic. Because of the large miniband width (> 150 meV), one can rule out the conventional quantum Hall effect as the source of the structure in the Hall conductivity. It is instead attributed to a high density of localized states at the bottom of each Landau level, resulting from interface-roughness-induced potential fluctuations.

引用

页码：1959 / 1962

页数：4

共 26 条

[1] QUANTUM THEORY OF TRANSVERSE GALVANO-MAGNETIC PHENOMENA [J].