ELECTRON-DENSITIES IN INAS-ALSB QUANTUM WELLS

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[2] MOLECULAR-BEAM EPITAXY OF AISB [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 983 - 985

[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540

[4] Chang L. L., 1980, Journal of the Physical Society of Japan, V49, P997

[5] ESAKI L, 1981, APPL PHYS LETT, V20, pL259

[6] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[7] OPTICAL-PROPERTIES OF GASB-ALSB SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 152 - 154

[8] REDUCTION IN DISLOCATION DENSITIES IN THE STEP-GRADED GROWTH OF INGAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 808 - 809

[9] GASB-ALSB-INAS MULTI-HETEROJUNCTIONS [J]. PHYSICA B & C, 1983, 117 (MAR): : 741 - 743

[10] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 550 - 552

[1] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761

[2] MOLECULAR-BEAM EPITAXY OF AISB [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 983 - 985

[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540

[4] Chang L. L., 1980, Journal of the Physical Society of Japan, V49, P997

[5] ESAKI L, 1981, APPL PHYS LETT, V20, pL259

[6] ELEMENTARY THEORY OF HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021

[7] OPTICAL-PROPERTIES OF GASB-ALSB SUPER-LATTICES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 152 - 154

[8] REDUCTION IN DISLOCATION DENSITIES IN THE STEP-GRADED GROWTH OF INGAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 808 - 809

[9] GASB-ALSB-INAS MULTI-HETEROJUNCTIONS [J]. PHYSICA B & C, 1983, 117 (MAR): : 741 - 743

[10] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 550 - 552