REDUCTION IN DISLOCATION DENSITIES IN THE STEP-GRADED GROWTH OF INGAAS BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

SERRANO, CM ^{[1
]}

CHANG, CA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.92565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：808 / 809

页数：2

共 6 条

[1] EFFECT OF LATTICE MISMATCH ON THE ELECTRON MOBILITIES OF INAS GROWN ON GAAS BY MBE
CHANG, CA
SERRANO, CM
CHANG, LL
ESAKI, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (02): : 603 - 605
[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[3] STUDIES BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE OF INAS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
CHANG, CA
SERRANO, CM
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 538 - 540
[4] SUBSTRATE EFFECT ON THE LATTICE-CONSTANTS OF THE MBE-GROWN IN1-XGAXAS AND GASB1-YASY
CHANG, CA
SEGMULLER, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 285 - 287
[5] MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559
[6] OLSEN GH, 1978, CRYSTAL GROWTH THEOR, V2, P1