SIMULATION OF ELASTIC-NETWORK RELAXATION - ISLANDS IN SEMICONDUCTOR HETEROJUNCTIONS

被引：2

作者：

BIAGINI, M ^{[1
]}

CATELLANI, A ^{[1
]}

机构：

[1] CNR,IST MASPEC,I-43100 PARMA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.358452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of a computer simulation for islands in semiconductor strained heterojunctions are presented. The atomic positions are individually calculated by means of a minimization procedure of the total elastic energy, evaluated within Keating's model. Results obtained for Ge/Si and InAs/ GaAs systems differ substantially from the ones obtained via the macroscopic theory, which largely overestimates the elastic relaxation energy. The results are applied to evaluate the critical thickness corresponding to undislocated island nucleation in epitaxial strained heterostructures.

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页码：3516 / 3519

页数：4

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