HIGH-FIELD HALL MOBILITY OF N-TYPE SILICON INCLUDING EFFECT OF MAGNETIC FIELD ON CARRIER DISTRIBUTION FUNCTION

被引：1

作者：

BASU, PK

NAG, BR

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1971年 / 4卷 / 01期

关键词：

D O I：

10.1088/0022-3719/4/1/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：44 / &

共 4 条

[1] ROOM TEMPERATURE HIGH-FIELD HALL MOBILITY IN N-TYPE SILICON
BASU, PK
NAG, BR
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (12): : 2396 - &
[2] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI
DUMKE, WP
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939
[3] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON
LONG, D
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032
[4] HOT CARRIER HALL MOBILITY AND MAGNETORESISTANCE IN N-TYPE GERMANIUM FOR INTERMEDIATE CARRIER CONCENTRATION
NAG, BR
GUHA, S
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (572P): : 425 - +