A NOVEL SCANNING ELECTRON-MICROSCOPE METHOD FOR THE INVESTIGATION OF CHARGE TRAPPING IN INSULATORS

被引：33

作者：

GONG, H

ONG, CK

机构：

[1] Department of Physics, National University of Singapore, Lower Kent Ridge

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.355873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technique using a copper detector in a scanning electron microscope is introduced for the investigation of charging in insulators, and pure single-crystalline cr-quartz samples are studied. The curve of charging rate varying with time is obtained, and the total charge trapped in the sample is accurately determined. Furthermore, the effects of electron-beam energy and current on charging are also examined. Our results suggest that electron-radiation-induced defects in the sample play major roles in the charge trapping. Details of the experimental setup are given.

引用

收藏

页码：449 / 453

页数：5

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