ELECTRONIC PROCESSES AND EXCESS CURRENTS IN GOLD-DOPED NARROW LILICON JUNCTIONS

被引：101

作者：

SAH, CT

机构：

来源：

PHYSICAL REVIEW | 1961年 / 123卷 / 05期

关键词：

D O I：

10.1103/PhysRev.123.1594

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1594 / &

共 45 条

[1]

BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[2]

BROOKS H, 1955, ADVANCES ELECTRONICS

[3]

CASTELLAN GW, 1951, SEMICONDUCTING MATER

[4] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[5]

CHYNOWETH AG, 1960, PROGRESS SEMICONDUCT, V4

[6]

CHYNOWETH AG, 1960, 4 ICS

[7]

CLASSEN RS, 1960, BULL AM PHYS SOC, V5, P406

[8] PROPERTIES OF SILICON AND GERMANIUM .2. [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300

[9] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[10] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604