BAND TRAILINGS IN STRONGLY DOPED GASB

被引：2

作者：

MATHIEU, H

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1970年 / 31卷 / 01期

关键词：

D O I：

10.1016/0022-3697(70)90288-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：67 / +

页数：1

共 16 条

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[5]

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[7]

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[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J].

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PHYSICAL REVIEW, 1966, 148 (02) :722-+

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

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[10]

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