PHENOMENOLOGY OF IMPURITY CONDUCTION IN SEMICONDUCTORS

被引：9

作者：

MCIRVINE, EC

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(60)90259-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：356 / 358

页数：3

共 12 条

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[6] RESISTIVITY AND HALL COEFFICIENT OF ANTIMONY-DOPED GERMANIUM AT LOW TEMPERATURES
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) : 69 - 80
[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES
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[8] THE ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES
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[9] RESISTIVITY, HALL EFFECT AND THERMO-ELECTRIC POWER OF CONDUCTING AND PHOTO-CONDUCTING SINGLE CRYSTALS OF CDS FROM 20-700-DEGREES-K
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VINK, HJ
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[J]. PHYSICA, 1954, 20 (11): : 1095 - 1099
[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON
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