HALL-EFFECT IN A MAGNETIC-FIELD-LOCALIZED 2-DIMENSIONAL ELECTRON-SYSTEM

We report measurements of the Hall effect in the localized two-dimensional electron system at low Landau-level filling factors nu, where the diagonal resistivity is thermally activated, including the regime previously identified as a pinned Wigner crystal. We find that the Hall resistivity is universally given by the classical, free-electron gas value of h/ve2 (within experimental uncertainty of 5%) even when the diverging diagonal resistivity reaches approximately 100h/ve2. This implies that both Hall and diagonal conductivities, calculated via matrix inversion, approach zero in the localized regime.