ION BOMBARDMENT OF SINGLE CRYSTALS OF ALUMINUM

被引：18

作者：

CUNNINGHAM, RL

NGYELIM, J

GOW, KV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 04期

关键词：

D O I：

10.1063/1.1729578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：984 / &

共 26 条

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[4] ION-BOMBARDMENT ETCHING OF SILICON AND GERMANIUM [J].

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OMAN, RM .

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[5]

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[6]

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[7]

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[8]

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[9]

KOEDAM M, 1961, THESIS STATE U UTREC

[10]

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