PLASMA-ETCH TECHNOLOGY

被引：8

作者：

COTLER, TJ

ELTA, ME

机构：

来源：

IEEE CIRCUITS AND DEVICES MAGAZINE | 1990年 / 6卷 / 04期

关键词：

D O I：

10.1109/101.59429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：38 / 43

页数：6

共 10 条

[1]

Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856

[2] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTORS [J].

DONNELLY, VM ;

FLAMM, DL ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :626-628

DOWNEY, SW ;

MITCHELL, A ;

GOTTSCHO, RA .

[4]

EINSPRUCH NG, 1984, VLSI ELECTRONICS, V8

[5]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[6] PLASMA PROCESSING IN MICROELECTRONICS MANUFACTURING [J].

GRAVES, DB .

[7]

GRIMARD DS, 1989, P SPIE S DRY PROCESS

[8]

Hershkowitz N., 1989, PLASMA DIAGNOSTICS

[9]

MUCHA JA, 1985, SOLID STATE TECHNOL, V28, P123

[10]

Wolf S., 1986, SILICON PROCESSING V