SILICON HYDROGEN-BONDS IN SILICON-OXIDE NEAR THE SIO2/SI INTERFACE

被引：24

作者：

OGAWA, H ^{[1
]}

TERADA, N ^{[1
]}

SUGIYAMA, K ^{[1
]}

MORIKI, K ^{[1
]}

MIYATA, N ^{[1
]}

AOYAMA, T ^{[1
]}

SUGINO, R ^{[1
]}

ITO, T ^{[1
]}

HATTORI, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90347-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The role of hydrogen peroxide in RCA standard clean was roughly clarified by angle-resolved photoelectron spectroscopy and infrared absorption spectroscopy such that the oxidation by basic hydrogen peroxide results in a negligible amount of Si-H bonds in native oxide, while the oxidation by acidic hydrogen peroxide results in a small amount of Si-H bonds in native oxide. It is also found that oxidation in a boiling solution of HNO3 results in large amount of Si-H bonds in native oxide as in the case of oxidation in a hot solution of HNO3.

引用

页码：836 / 840

页数：5

共 3 条

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HOLLINGER, G
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[2] THE EVOLUTION OF SILICON-WAFER CLEANING TECHNOLOGY
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[3] SILICON-HYDROGEN BONDS IN SILICON NATIVE OXIDES FORMED DURING WET CHEMICAL TREATMENTS
SUGIYAMA, K
IGARASHI, T
MORIKI, K
NAGASAWA, Y
AOYAMA, T
SUGINO, R
ITO, T
HATTORI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2401 - L2404

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