THICKNESS DEPENDENCE OF THE PROPERTIES AND THERMAL-STABILITY OF PTSI FILMS

被引：32

作者：

DAS, SR ^{[1
]}

SHEERGAR, K ^{[1
]}

XU, DX ^{[1
]}

NAEM, A ^{[1
]}

机构：

[1] NO TELECOM CANADA LTD,CTR TELECOM MICROELECTR,SEMICOND COMPONENTS GRP,OTTAWA,ON K1Y 4H7,CANADA

来源：

THIN SOLID FILMS | 1994年 / 253卷 / 1-2期

关键词：

ELECTRON MICROSCOPY; REFLECTION SPECTROSCOPY; SILICIDES; X-RAY DIFFRACTION;

D O I：

10.1016/0040-6090(94)90368-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase growth sequence, structural, electrical and optical properties and thermal stability of platinum silicide films were investigated as a function of silicide film thickness in the range 133-2506 Angstrom. The platinum silicide films were formed by ex situ silicidation of Pt films sputter-deposited onto n(-)-Si (100) substrates. Films of all thicknesses were polycrystalline brit exhibited columnar growth morphology and strong orientation effects. The orientation, grain size, electrical resistivity, specular reflectance and thermal stability were observed to be strongly thickness dependent. The temperature at which the film properties degraded increased with film thickness. The degradation mechanism appeared to be Pt diffusion into Si accompanied by the disintegration of the PtSi layer and the formation of an additional Pt3Si phase.

引用

页码：467 / 472

页数：6

共 9 条

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