SELECTIVE EPITAXIAL-GROWTH ON (100) VICINAL GAAS-SURFACES BY ATMOSPHERIC PRESSURE-METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE

被引：9

作者：

YAMAGUCHI, K

OKAMOTO, K

机构：

[1] University of Electro-Communications, Chofu, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

METALORGANIC CHEMICAL VAPOR DEPOSITION; DIETHYLGALLIUMCHLORIDE; GAAS; STEP FLOW; SELECTIVE EPITAXIAL GROWTH; REEVAPORATION;

D O I：

10.1143/JJAP.30.L231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective epitaxial growth of the step-flow mode is observed on (100) vicinal GaAs surfaces by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD) using diethylgalliumchloride (DEGaCl). The extremely falt surface obtained is identified as an exactly (100)-oriented plane and extends from one side of the mask edge (upstream edge of step flow) toward the downstream region of the step flow. The step-flow-mode growth was observed in a wide range of growth conditions, and it is suggested that the enhancement of the reevaporation of GaCl species suppresses two-dimensional nucleation on the terrace surfaces.

引用

页码：L231 / L234

页数：4

共 15 条

[1] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].