GROWTH AND ELECTRICAL-PROPERTIES OF LIQUID-PHASE EPITAXIAL LAYERS OF GAXIN1-XP LATTICE-MATCHED TO GAAS SUBSTRATES

被引：14

作者：

PENNDORF, J

KUHN, G

NEUMANN, H

MULLER, A

机构：

[1] KARL MARX UNIV,FACHBEREICH KRISTALLOG,SEKT CHEM,DDR-703 LEIPZIG,GER DEM REP

[2] KARL MARX UNIV,SEKT PHYS,DDR-701 LEIPZIG,GER DEM REP

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1980年 / 15卷 / 02期

关键词：

D O I：

10.1002/crat.19800150207

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：169 / 175

页数：7

共 31 条

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[17] LIQUID-PHASE EPITAXIAL-GROWTH GAXIN1-XP [J].

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[20]

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