SIMPLE ANALYSIS OF VAPOR-PHASE GROWTH - CITING AN INSTANCE OF GAXIN1-XAS

被引：18

作者：

NAGAI, H

机构：

[1] Nippon Telegraph and Telephone Public Corporation, Musashino Electrical Communication Laboratory, Tokyo

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

gallium indium arsenide; thermodynamic calculation; vapor phase growth;

D O I：

10.1149/1.2129287

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To analyze the vapor phase deposition of GaxIn1-xAs, a simple calculation method is offered. This method explains the experimental relation between the mixed crystal composition and feed gas composition, and easily provides knowledge of the influence of AS4 pressure and HCl/H2 value on the mixed crystal composition and deposition rate. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1400 / 1403

页数：4

共 9 条

[1] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J].