HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI/SI0.87GE0.13/SI HETEROSTRUCTURE

被引：20

作者：

WHALL, TE

SMITH, DW

PLEWS, AD

KUBIAK, RA

PHILLIPS, PJ

PARKER, EHC

机构：

[1] Dept. of Phys., Warwick Univ., Coventry

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 04期

关键词：

D O I：

10.1088/0268-1242/8/4/023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in interface charge, and that the mobility is now limited by interface roughness scattering.

引用

页码：615 / 616

页数：2

共 13 条

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