HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI/SI0.87GE0.13/SI HETEROSTRUCTURE

被引:20
作者
WHALL, TE
SMITH, DW
PLEWS, AD
KUBIAK, RA
PHILLIPS, PJ
PARKER, EHC
机构
[1] Dept. of Phys., Warwick Univ., Coventry
关键词
D O I
10.1088/0268-1242/8/4/023
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in interface charge, and that the mobility is now limited by interface roughness scattering.
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页码:615 / 616
页数:2
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