MECHANISM OF CLUSTER FORMATION IN A CLEAN SILANE DISCHARGE

被引：39

作者：

VEPREK, S

SCHOPPER, K

AMBACHER, O

RIEGER, W

VEPREKHEIJMAN, MGJ

机构：

[1] Institute for Chemistry of Information Recording, Technical University Munich

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 07期

关键词：

D O I：

10.1149/1.2220742

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The mechanism of the formation of hydrogenated silicon clusters in a clean silane glow discharge is studied with elastic light scattering. The data are complemented by mass spectrometric measurements and theoretical modeling. In a clean discharge with a maximum oxygen and water content of <0.1 mole percent (m/o) the appearance of the clusters correlates with the formation of higher polysilanes. A possible mechanism of the cluster formation is suggested.

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页码：1935 / 1942

页数：8

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