ABOUT THE I-V CHARACTERISTIC OF METAL-POROUS SILICON DIODES

被引：25

作者：

GIEBEL, G ^{[1
]}

PAVESI, L ^{[1
]}

机构：

[1] UNIV TRENT, DIPARTIMENTO FIS, I-38050 TRENT, ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1995年 / 151卷 / 02期

关键词：

D O I：

10.1002/pssa.2211510212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room temperature current/voltage (I-V) characteristics of several porous silicon(PS)/metal diodes are measured. Different metals are used to form the contacts. Severe stress is also applied to the diodes and the I-V characteristics of stressed diodes are analysed. The present study supports the description of Ben Chorin et al. of these diodes, where the rectifying junction is placed at the interface between the PS layer and the bulk Si and the carrier transport through the PS layer is determined by a hopping mechanism.

引用

页码：355 / 361

页数：7

共 18 条

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[4] BENCHORIN M, IN PRESS
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[8] ULTRAVIOLET-LIGHT FROM POROUS SILICON BY A MICROSCOPIC DISCHARGE
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