A SIMPLE SOURCE CELL DESIGN FOR MBE

被引：7

作者：

KUBIAK, RA

DRISCOLL, P

PARKER, EHC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 02期

关键词：

D O I：

10.1116/1.571278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：252 / 253

页数：2

共 8 条

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CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :275-284

[3] HIGH-TEMPERATURE HIGH-PURITY SOURCE FOR METAL BEAM EPITAXY [J].

FARROW, RFC ;

WILLIAMS, GM .

[4]

KUBIAK RA, 1982, THESIS U LONDON

[5]

KUBIAK RAA, UNPUB

[6] DESIGN CONSIDERATIONS FOR MOLECULAR-BEAM EPITAXY SYSTEMS [J].

LUSCHER, PE ;

COLLINS, DM .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :15-32

[7]

Ploog K., 1980, CRYSTALS GROWTH PROP, V3

[8] ELECTRON-MOBILITY IN VAPOR-GROWN GAAS FILMS [J].

POTH, H ;

BRUCH, H ;

HEYEN, M ;

BALK, P .