SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2)

被引：113

作者：

CHAMBERS, SA

XU, F

CHEN, HW

VITOMIROV, IM

ANDERSON, SB

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.34.6605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6605 / 6611

页数：7

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