GAS AND SURFACE PROCESSES LEADING TO HYDROGENATED AMORPHOUS-SILICON FILMS

被引:26
作者
GALLACHER, A
SCOTT, J
机构
[1] Univ of Colorado, Boulder, CO, USA, Univ of Colorado, Boulder, CO, USA
来源
SOLAR CELLS | 1987年 / 21卷
关键词
D O I
10.1016/0379-6787(87)90114-1
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
2
引用
收藏
页码:147 / 152
页数:6
相关论文
共 2 条
[1]   RADICAL SPECIES IN ARGON-SILANE DISCHARGES [J].
ROBERTSON, R ;
HILS, D ;
CHATHAM, H ;
GALLAGHER, A .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :544-546
[2]   MONOSILICON AND DISILICON RADICALS IN SILANE AND SILANE-ARGON DC DISCHARGES [J].
ROBERTSON, R ;
GALLAGHER, A .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3402-3411