CHEMISTRY AND PHYSICS OF AMORPHOUS-SEMICONDUCTORS

被引：12

作者：

ADLER, D ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF CHEMICAL EDUCATION | 1980年 / 57卷 / 08期

关键词：

D O I：

10.1021/ed057p560

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：560 / 564

页数：5

共 10 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758

[2] DEFECTS IN AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :819-824

[3] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D ;

YOFFA, EJ .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11) :1920-1929

[4]

Adler D., 1971, AMORPHOUS SEMICONDUC

[5]

ADLER D, SOLAR CELLS

[6]

ADLER D, 1968, SOLID STATE PHYS, V21, P1

[7] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[8]

Levin A A, 1977, SOLID STATE QUANTUM

[9]

LICCIARDELLO DC, SOLAR CELLS

[10] LOCAL STRUCTURE, BONDING, AND ELECTRONIC PROPERTIES OF COVALENT AMORPHOUS-SEMICONDUCTORS [J].

OVSHINSKY, SR ;

ADLER, D .

CONTEMPORARY PHYSICS, 1978, 19 (02) :109-126

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