THE BAND-GAP OF GLOW-DISCHARGE-PRODUCED AMORPHOUS SIOX

被引:9
作者
CARIUS, R
FISCHER, R
HOLZENKAMPFER, E
机构
来源
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期
关键词
D O I
10.1051/jphyscol:19814224
中图分类号
学科分类号
摘要
引用
收藏
页码:1025 / 1028
页数:4
相关论文
共 16 条
[1]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[2]   CALCULATION OF OPTICAL PROPERTIES OF AMORPHOUS SIOX MATERIALS [J].
BENNETT, AJ ;
ROTH, LM .
PHYSICAL REVIEW B, 1971, 4 (08) :2686-+
[3]  
CARIUS R, 1981, J APPL PHYS
[4]   OPTICAL GAP AND INDEX OF REFRACTION OF HYDROGENATED FILMS OF AMORPHOUS-SILICON AT 95-DEGREES-K AND 295-DEGREES-K [J].
FERRATON, JP ;
ANCE, C ;
DONNADIEU, A .
THIN SOLID FILMS, 1981, 78 (03) :207-215
[5]  
FISCHER R, 1979, AMORPHOUS SEMICONDUC, pCH6
[6]   ELECTRONIC-PROPERTIES OF AMORPHOUS SIXGE1-X-H-FILMS [J].
HAUSCHILDT, D ;
FISCHER, R ;
FUHS, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (02) :563-566
[7]   PROOF OF AN ENERGY GAP IN A MODEL OF AMORPHOUS GE [J].
HEINE, V .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (10) :L221-&
[8]   ELECTRON-SPIN RESONANCE AND HOPPING CONDUCTIVITY OF A-SIOX [J].
HOLZENKAMPFER, E ;
RICHTER, FW ;
STUKE, J ;
VOGETGROTE, U .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :327-338
[9]  
HOLZENKAMPFER E, 1980, VERHANDL DGP, V15, pHL63
[10]   CLUSTER PLUS EFFECTIVE MEDIUM TIGHT-BINDING STUDY OF SIOX SYSTEMS [J].
LANNOO, M ;
ALLAN, G .
SOLID STATE COMMUNICATIONS, 1978, 28 (09) :733-739